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Disilane (Si2H6)

Si2H6 is used for rapid low temperature deposition to form uniformed film in the miniaturized semiconductor process.

  • INDIVIDUAL

SPECIFICATION

Unit : ppmv
SPECIFICATION : Si2H6, O2+Ar, N2, CO2, CH4, SiH4, Si3H8, Si4H10, Chlorosilane, Siloxane, H20
Si2H6 O2+Ar N2 CO2 CH4 SiH4 Si3H8 Si4H10 Chlorosilane Siloxane H20
99.99%
[Excluded SiH4, Si3H8, Si4H10]
1.0 2.0 1.0 1.0 500 50 50 0.2 3.0 1.0
SPECIFICATION : Si2H6, SPECIFICATIO
Si2H6 SPECIFICATIO
Purity Si2H6 99.99%
[Excluded SiH4, Si3H8, Si4H10]
Impurity O2+Ar < 1.0
N2 < 2.0
CO2 < 1.0
CH4 < 1.0
SiH4 < 500
Si3H8 < 50
Si4H10 < 50
Chlorosilane < 0.2
Siloxane < 3.0
H2O < 1.0

CYLINDERS INFORMATION

CYLINDERS INFORMATION : TYPE, MATERIAL, FILLING WEIGHT, VALVE CONNECTION TYPE
TYPE MATERIAL FILLING WEIGHT VALVE CONNECTION TYPE
47L Cr-Mo Steel, Mn Steel 3 / 10 / 12 kg JIS-22-14L,
CGA/DISS 632 etc.
CYLINDERS INFORMATION : 47L, SPECIFICATIO
47L SPECIFICATIO
MATERIAL Cr-Mo Steel, Mn Steel
FILLING WEIGHT 3 / 10 / 12 kg
VALVE CONNECTION TYPE JIS-22-14L, CGA/DISS632 etc.
Purpose of use - Wafer → Substrate In (Wafer, Chamber, Heater) → Processing (Process gases) Zoom In - Semiconductor (Dielectric) Si2H6:Channel - Si2H6 is used for rapid low temperature deposition to form uniformed film in the miniaturized semiconductor process. → Substrate Out → Semiconductor (Wafer)